RJQ6008 RENESAS
High Speed Power Switching
Transistor
Igbt
Package
TO-3PFM-5
Voltage
600V-10A
Manufacturer
Renesas Electronics Corporation
Number Of Pins
5
Product Description
Low collector to emitter saturation voltage
VCE (sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching